H5AN8G6NAFR-UHC vs K4A8G085WB-BIWE Perbandingan
Perbandingan bersamaan detil H5AN8G6NAFR-UHC dari SK hynix dan K4A8G085WB-BIWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN8G6NAFR-UHC | K4A8G085WB-BIWE |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM (CMOS) | DDR4 SDRAM |
| Memory Density | 8 Gbit | — |
| Organisasi | 512M x 16 | — |
| Tegangan Pemuat | 1.2 V | 1.2 V |
| Laju Data | 2400 MT/s | 3200 Mbps |
| Clock Architecture | Differential clock (CK_t / CK_c), fully synchronous | — |
| Paket | 96-ball FBGA (TFBGA) | 78-FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | 0C to +85C | 0°C to +85°C |
| Refresh | Auto self-refresh | Auto-refresh, self-refresh |
| Precharge | Auto precharge function | — |
| Reset | Asynchronous reset function | — |
| Data Mask | DM function supported | — |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration function | — |
| Error Checking | CRC function | — |
| Write Leveling | Write leveling function supported | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Ukuran Memori | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Latensi CAS | — | [DATA_NEEDED: CL value] |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |