H5AN8G6NAFR-UHC vs K4A8G085WB-BIWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NAFR-UHC disebabkan oleh SK hynix dan K4A8G085WB-BIWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G6NAFR-UHC | K4A8G085WB-BIWE |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM (CMOS) | DDR4 SDRAM |
| Memory Density | 8 Gbit | — |
| Organisasi | 512M x 16 | — |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Kadar Data | 2400 MT/s | 3200 Mbps |
| Clock Architecture | Differential clock (CK_t / CK_c), fully synchronous | — |
| Kemasan | 96-ball FBGA (TFBGA) | 78-FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | 0C to +85C | 0°C to +85°C |
| Refresh | Auto self-refresh | Auto-refresh, self-refresh |
| Precharge | Auto precharge function | — |
| Reset | Asynchronous reset function | — |
| Data Mask | DM function supported | — |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration function | — |
| Error Checking | CRC function | — |
| Write Leveling | Write leveling function supported | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Saiz Ingatan | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Latensi CAS | — | [DATA_NEEDED: CL value] |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |