IPB200N25N3GATMA1 vs IPB107N20N3GATMA1 Perbandingan
Perbandingan bersamaan detil IPB200N25N3GATMA1 dari Infineon dan IPB107N20N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB107N20N3GATMA1 - 200V 88A OptiMOS 3 N-Channel MOSFET | Infineon
IPB107N20N3GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPB200N25N3GATMA1 | IPB107N20N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Paket | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Drain-Source Voltage (V_DS) | 250 V | — |
| Continuous Drain Current (I_D) at T_C | 64 A | — |
| Power Dissipation (P_D) at T_C | 300 W | — |
| R_DS(on) max at V_GS=10V | 20 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/max] | — |
| Technology | OptiMOS 3 (Trench) | OptiMOS 3 trench MOSFET |
| Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical] | — |
| Rentang Suhu Kerja | -55C to +175C | [DATA_NEEDED: Tj max and operating range] |
| Status RoHS | Compliant | Compliant |
| Bebas Halogen | Yes (per Infineon OptiMOS family datasheet) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| Jumlah Pin | 3 (2+tab) | 3 (Drain, Source, Gate) + Tab |
| Product Family | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at Tc | — | 88 A |
| Maximum Power Dissipation (Pd) at Tc | — | 300 W |
| On-Resistance RDS(on) at VGS=10V | — | 9.6 milliohm (typical, per third-party listing) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |