IPB200N25N3GATMA1 vs IPB107N20N3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB200N25N3GATMA1 disebabkan oleh Infineon dan IPB107N20N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPB107N20N3GATMA1 - 200V 88A OptiMOS 3 N-Channel MOSFET | Infineon
IPB107N20N3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPB200N25N3GATMA1 | IPB107N20N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | — |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Kemasan | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Drain-Source Voltage (V_DS) | 250 V | — |
| Continuous Drain Current (I_D) at T_C | 64 A | — |
| Power Dissipation (P_D) at T_C | 300 W | — |
| R_DS(on) max at V_GS=10V | 20 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/max] | — |
| Technology | OptiMOS 3 (Trench) | OptiMOS 3 trench MOSFET |
| Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical] | — |
| Gambaran Suhu Operasi | -55C to +175C | [DATA_NEEDED: Tj max and operating range] |
| Status RoHS | Compliant | Compliant |
| Boson Bebas | Yes (per Infineon OptiMOS family datasheet) | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Kiraan Pin | 3 (2+tab) | 3 (Drain, Source, Gate) + Tab |
| Product Family | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at Tc | — | 88 A |
| Maximum Power Dissipation (Pd) at Tc | — | 300 W |
| On-Resistance RDS(on) at VGS=10V | — | 9.6 milliohm (typical, per third-party listing) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |