IPB60R040CFD7ATMA1 vs IPB65R041CFD7ATMA1 Perbandingan

Perbandingan bersamaan detil IPB60R040CFD7ATMA1 dari Infineon dan IPB65R041CFD7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB60R040CFD7ATMA1 IPB65R041CFD7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family CoolMOS CFD7 —
Technology Superjunction (SJ) N-Channel MOSFET CoolMOS CFD7 superjunction N-channel MOSFET
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Dissipasi Listrik (TC=25°C) 227 W —
Rentang Suhu Kerja -55°C to +150°C —
Paket PG-TO263-3-2 (D2PAK) PG-TO263-3 (D2PAK, surface mount)
Tipe Mounting Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
Level MSL 1 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Lead-Free Yes —
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
Drain-Source Voltage (V_DS max) — 650 V
Continuous Drain Current (I_D, Tc=25°C) — 50 A
On-Resistance R_DS(on) max (V_GS=10V) — 41 mΩ
Power Dissipation (P_D, Tc=25°C) — 227 W
Gate-Source Voltage (V_GS) — ±20 V (max)
Gate Threshold Voltage (V_GS(th) typ) — 4.5 V
Total Gate Charge (Q_G typ) — [DATA_NEEDED: Q_G value]
Body Diode Reverse Recovery (Q_rr) — [DATA_NEEDED: Q_rr value]
Suhu Hubung Kerja — -55°C to +150°C
Jumlah Pin — 3 (Gate / Drain / Source, tab = Drain)
Bebas Halogen — Yes
Series — CoolMOS™ CFD7

Spek dan Sumber

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