IPB60R040CFD7ATMA1 vs IPB65R041CFD7ATMA1 比較

詳細並排比較 IPB60R040CFD7ATMA1 由 Infineon 與 IPB65R041CFD7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ 啟用中
Infineon
IPB65R041CFD7ATMA1 IPB65R041CFD7ATMA1 - 650V 41mΩ CoolMOS CFD7 MOSFET | Infineon

IPB65R041CFD7ATMA1 - 650V 41mΩ CoolMOS CFD7 MOSFET | Infineon

IPB65R041CFD7ATMA1 ✓ 啟用中

規格比較

參數 IPB60R040CFD7ATMA1 IPB65R041CFD7ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
庫存狀態 In Stock —
單價 (USD) $5.19 —
Manufacturer Infineon Technologies —
Product Family CoolMOS CFD7 —
Technology Superjunction (SJ) N-Channel MOSFET CoolMOS CFD7 superjunction N-channel MOSFET
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
功率耗散 (TC=25°C) 227 W —
工作溫度範圍 -55°C to +150°C —
封裝 PG-TO263-3-2 (D2PAK) PG-TO263-3 (D2PAK, surface mount)
安裝類型 Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
MSL 等級 1 1 (per JEDEC J-STD-020)
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
Drain-Source Voltage (V_DS max) — 650 V
Continuous Drain Current (I_D, Tc=25°C) — 50 A
On-Resistance R_DS(on) max (V_GS=10V) — 41 mΩ
Power Dissipation (P_D, Tc=25°C) — 227 W
Gate-Source Voltage (V_GS) — ±20 V (max)
Gate Threshold Voltage (V_GS(th) typ) — 4.5 V
Total Gate Charge (Q_G typ) — [DATA_NEEDED: Q_G value]
Body Diode Reverse Recovery (Q_rr) — [DATA_NEEDED: Q_rr value]
工作接面溫度 — -55°C to +150°C
腳位數 — 3 (Gate / Drain / Source, tab = Drain)
無鹵素 — Yes
Series — CoolMOS™ CFD7

資料表與資源

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