IPB60R040CFD7ATMA1 vs IPB65R041CFD7ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB60R040CFD7ATMA1 sa pamamagitan ng Infineon at IPB65R041CFD7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ NakahandaInfineon
IPB65R041CFD7ATMA1 - 650V 41mΩ CoolMOS CFD7 MOSFET | Infineon
IPB65R041CFD7ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB60R040CFD7ATMA1 | IPB65R041CFD7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $5.19 | — |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS CFD7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | CoolMOS CFD7 superjunction N-channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 40 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Pwersang Pinahihigpit (TC=25°C) | 227 W | — |
| Hanay ng Temperature na Operasyon | -55°C to +150°C | — |
| Packhaging | PG-TO263-3-2 (D2PAK) | PG-TO263-3 (D2PAK, surface mount) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Integrated Body Diode | Yes - ultra-fast CoolMOS CFD7 diode | — |
| Level ng MSL | 1 | 1 (per JEDEC J-STD-020) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Target Applications | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) | — |
| Drain-Source Voltage (V_DS max) | — | 650 V |
| Continuous Drain Current (I_D, Tc=25°C) | — | 50 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 41 mΩ |
| Power Dissipation (P_D, Tc=25°C) | — | 227 W |
| Gate-Source Voltage (V_GS) | — | ±20 V (max) |
| Gate Threshold Voltage (V_GS(th) typ) | — | 4.5 V |
| Total Gate Charge (Q_G typ) | — | [DATA_NEEDED: Q_G value] |
| Body Diode Reverse Recovery (Q_rr) | — | [DATA_NEEDED: Q_rr value] |
| Temperature ng Junction na Operasyon | — | -55°C to +150°C |
| Bilang ng Pin | — | 3 (Gate / Drain / Source, tab = Drain) |
| Wala sa Halogen | — | Yes |
| Series | — | CoolMOS™ CFD7 |