IPB60R040CFD7ATMA1 vs IPB65R041CFD7ATMA1 Comparison

Detailed side-by-side comparison of IPB60R040CFD7ATMA1 by Infineon and IPB65R041CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB60R040CFD7ATMA1 IPB65R041CFD7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock —
Unit Price (USD) $5.19 —
Manufacturer Infineon Technologies —
Product Family CoolMOS CFD7 —
Technology Superjunction (SJ) N-Channel MOSFET CoolMOS CFD7 superjunction N-channel MOSFET
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Power Dissipation (TC=25°C) 227 W —
Operating Temperature Range -55°C to +150°C —
Package PG-TO263-3-2 (D2PAK) PG-TO263-3 (D2PAK, surface mount)
Mounting Type Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
MSL Level 1 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Lead-Free Yes —
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
Drain-Source Voltage (V_DS max) — 650 V
Continuous Drain Current (I_D, Tc=25°C) — 50 A
On-Resistance R_DS(on) max (V_GS=10V) — 41 mΩ
Power Dissipation (P_D, Tc=25°C) — 227 W
Gate-Source Voltage (V_GS) — ±20 V (max)
Gate Threshold Voltage (V_GS(th) typ) — 4.5 V
Total Gate Charge (Q_G typ) — [DATA_NEEDED: Q_G value]
Body Diode Reverse Recovery (Q_rr) — [DATA_NEEDED: Q_rr value]
Operating Junction Temperature — -55°C to +150°C
Pin Count — 3 (Gate / Drain / Source, tab = Drain)
Halogen Free — Yes
Series — CoolMOS™ CFD7

Datasheets & Resources

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