IPB60R040CFD7ATMA1 vs IPB65R041CFD7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB60R040CFD7ATMA1 disebabkan oleh Infineon dan IPB65R041CFD7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB60R040CFD7ATMA1 IPB65R041CFD7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok In Stock —
Harga Unit (USD) $5.19 —
Manufacturer Infineon Technologies —
Product Family CoolMOS CFD7 —
Technology Superjunction (SJ) N-Channel MOSFET CoolMOS CFD7 superjunction N-channel MOSFET
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Pembuangan Kuasa (TC=25°C) 227 W —
Gambaran Suhu Operasi -55°C to +150°C —
Kemasan PG-TO263-3-2 (D2PAK) PG-TO263-3 (D2PAK, surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
Aras MSL 1 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Lead-Free Yes —
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
Drain-Source Voltage (V_DS max) — 650 V
Continuous Drain Current (I_D, Tc=25°C) — 50 A
On-Resistance R_DS(on) max (V_GS=10V) — 41 mΩ
Power Dissipation (P_D, Tc=25°C) — 227 W
Gate-Source Voltage (V_GS) — ±20 V (max)
Gate Threshold Voltage (V_GS(th) typ) — 4.5 V
Total Gate Charge (Q_G typ) — [DATA_NEEDED: Q_G value]
Body Diode Reverse Recovery (Q_rr) — [DATA_NEEDED: Q_rr value]
Suhu Hubungan Operasi — -55°C to +150°C
Kiraan Pin — 3 (Gate / Drain / Source, tab = Drain)
Boson Bebas — Yes
Series — CoolMOS™ CFD7

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