IPB65R041CFD7ATMA1 vs IPB60R040CFD7ATMA1 Perbandingan

Perbandingan bersamaan detil IPB65R041CFD7ATMA1 dari Infineon dan IPB60R040CFD7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB65R041CFD7ATMA1 IPB60R040CFD7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $5,19
Technology CoolMOS CFD7 superjunction N-channel MOSFET Superjunction (SJ) N-Channel MOSFET
Drain-Source Voltage (V_DS max) 650 V —
Continuous Drain Current (I_D, Tc=25°C) 50 A —
On-Resistance R_DS(on) max (V_GS=10V) 41 mΩ —
Power Dissipation (P_D, Tc=25°C) 227 W —
Gate-Source Voltage (V_GS) ±20 V (max) —
Gate Threshold Voltage (V_GS(th) typ) 4.5 V —
Total Gate Charge (Q_G typ) [DATA_NEEDED: Q_G value] —
Body Diode Reverse Recovery (Q_rr) [DATA_NEEDED: Q_rr value] —
Suhu Hubung Kerja -55°C to +150°C —
Paket PG-TO263-3 (D2PAK, surface mount) PG-TO263-3-2 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate / Drain / Source, tab = Drain) —
Status RoHS Compliant Compliant
Bebas Halogen Yes —
Level MSL 1 (per JEDEC J-STD-020) 1
Series CoolMOS™ CFD7 —
Manufacturer — Infineon Technologies
Product Family — CoolMOS CFD7
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 40 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
Dissipasi Listrik (TC=25°C) — 227 W
Rentang Suhu Kerja — -55°C to +150°C
Integrated Body Diode — Yes - ultra-fast CoolMOS CFD7 diode
Lead-Free — Yes
Target Applications — Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

Spek dan Sumber

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