IPB65R041CFD7ATMA1 vs IPB60R040CFD7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB65R041CFD7ATMA1 disebabkan oleh Infineon dan IPB60R040CFD7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB65R041CFD7ATMA1 IPB60R040CFD7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $5.19
Technology CoolMOS CFD7 superjunction N-channel MOSFET Superjunction (SJ) N-Channel MOSFET
Drain-Source Voltage (V_DS max) 650 V —
Continuous Drain Current (I_D, Tc=25°C) 50 A —
On-Resistance R_DS(on) max (V_GS=10V) 41 mΩ —
Power Dissipation (P_D, Tc=25°C) 227 W —
Gate-Source Voltage (V_GS) ±20 V (max) —
Gate Threshold Voltage (V_GS(th) typ) 4.5 V —
Total Gate Charge (Q_G typ) [DATA_NEEDED: Q_G value] —
Body Diode Reverse Recovery (Q_rr) [DATA_NEEDED: Q_rr value] —
Suhu Hubungan Operasi -55°C to +150°C —
Kemasan PG-TO263-3 (D2PAK, surface mount) PG-TO263-3-2 (D2PAK)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate / Drain / Source, tab = Drain) —
Status RoHS Compliant Compliant
Boson Bebas Yes —
Aras MSL 1 (per JEDEC J-STD-020) 1
Series CoolMOS™ CFD7 —
Manufacturer — Infineon Technologies
Product Family — CoolMOS CFD7
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 40 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
Pembuangan Kuasa (TC=25°C) — 227 W
Gambaran Suhu Operasi — -55°C to +150°C
Integrated Body Diode — Yes - ultra-fast CoolMOS CFD7 diode
Lead-Free — Yes
Target Applications — Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

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