IPD50N06S409ATMA2 vs IPB081N06L3GATMA1 Perbandingan

Perbandingan bersamaan detil IPD50N06S409ATMA2 dari Infineon dan IPB081N06L3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD50N06S409ATMA2 IPB081N06L3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology N-Channel MOSFET (OptiMOS) OptiMOS 3 (low-voltage power MOSFET)
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Tc 50 A —
On-Resistance R<sub>DS(on)</sub> max at VGS=10V 9 mΩ —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 1.2 V min, 2.1 V typ, 2.6 V max
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (Pd) at Tc 71 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-TO252-3-11 (DPAK) PG-TO263-3 (D2PAK)
Jumlah Pin 3 (2 + Tab) —
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
Lead-Free / Halogen-Free [DATA_NEEDED] —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc=25C — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current rating]
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
On-Resistance RDS(on) at VGS=10V — 8.1 mOhm typical
Maximum Power Dissipation (Pd) at Tc=25C — 79 W
Rentang Suhu Kerja — -55 C to +175 C (junction)
Jumlah Pin — 3
Pin Configuration — Gate / Drain / Source (D2PAK standard)
Level MSL — 1 (unlimited)

Spek dan Sumber

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