IPD50N06S409ATMA2 vs IPB081N06L3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50N06S409ATMA2 disebabkan oleh Infineon dan IPB081N06L3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD50N06S409ATMA2 IPB081N06L3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology N-Channel MOSFET (OptiMOS) OptiMOS 3 (low-voltage power MOSFET)
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Tc 50 A —
On-Resistance R<sub>DS(on)</sub> max at VGS=10V 9 mΩ —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 1.2 V min, 2.1 V typ, 2.6 V max
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (Pd) at Tc 71 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TO252-3-11 (DPAK) PG-TO263-3 (D2PAK)
Kiraan Pin 3 (2 + Tab) —
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
Lead-Free / Halogen-Free [DATA_NEEDED] —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc=25C — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current rating]
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
On-Resistance RDS(on) at VGS=10V — 8.1 mOhm typical
Maximum Power Dissipation (Pd) at Tc=25C — 79 W
Gambaran Suhu Operasi — -55 C to +175 C (junction)
Bilangan Pin — 3
Pin Configuration — Gate / Drain / Source (D2PAK standard)
Aras MSL — 1 (unlimited)

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