IPD50N06S409ATMA2 vs IPB081N06L3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD50N06S409ATMA2 sa pamamagitan ng Infineon at IPB081N06L3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD50N06S409ATMA2 - 60V 50A 9mΩ OptiMOS N-Ch MOSFET | Infineon
IPD50N06S409ATMA2 ✓ NakahandaInfineon
IPB081N06L3GATMA1 - 60V 50A OptiMOS 3 N-Channel MOSFET | Infineon
IPB081N06L3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD50N06S409ATMA2 | IPB081N06L3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | N-Channel MOSFET (OptiMOS) | OptiMOS 3 (low-voltage power MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Tc | 50 A | — |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 1.2 V min, 2.1 V typ, 2.6 V max |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-TO252-3-11 (DPAK) | PG-TO263-3 (D2PAK) |
| Bilang ng Pin | 3 (2 + Tab) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | [DATA_NEEDED] | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25C | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current rating] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance RDS(on) at VGS=10V | — | 8.1 mOhm typical |
| Maximum Power Dissipation (Pd) at Tc=25C | — | 79 W |
| Hanay ng Temperature na Operasyon | — | -55 C to +175 C (junction) |
| Bilang ng Pins | — | 3 |
| Pin Configuration | — | Gate / Drain / Source (D2PAK standard) |
| Level ng MSL | — | 1 (unlimited) |