IPD60R600PFD7SAUMA1 vs IPD600N25N3GATMA1 Perbandingan

Perbandingan bersamaan detil IPD60R600PFD7SAUMA1 dari Infineon dan IPD600N25N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD60R600PFD7SAUMA1 IPD600N25N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS PFD7 —
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Technology Superjunction (CoolMOS) OptiMOS 3 trench MOSFET
Drain-Source Voltage (V_DS) 600 V —
Continuous Drain Current (I_D) 6 A (Tc) —
R_DS(on) Max 600 mΩ @ V_GS = 10 V, I_D = 1.7 A —
Total Gate Charge (Q_g) 8.5 nC —
Output Capacitance (C_oss) 8 pF @ 400 V —
Power Dissipation (P_D) 31 W (Tc) —
Gate Threshold Voltage (V_GS(th)) 3.5 V (typ) —
Paket PG-TO252-3 (DPAK) PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount
Tipe Mounting Surface Mount Surface Mount (Tape & Reel)
Suhu Kerja -55°C to +150°C (Tj) —
Level MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant —
Reel Quantity 2500 —
Part Series — OptiMOS 3
Drain-Source Voltage (VDS) — 250 V
Continuous Drain Current (ID) at Tc — 25 A
Power Dissipation (PD) at Tc — 136 W
On-Resistance RDS(on) max — 60 mOhm at VGS = 10 V
Tegangan Batas Gerbang — [DATA_NEEDED: VGS(th) typical/min/max]
Suhu Hubung Kerja — -55 C to +175 C
Lead Plating — Pb-free
RoHS Compliance — Compliant
Bebas Halogen — Yes, per IEC 61249-2-21
JEDEC Qualification — Qualified for target application

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon