IPD60R600PFD7SAUMA1 vs IPD600N25N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R600PFD7SAUMA1 disebabkan oleh Infineon dan IPD600N25N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD60R600PFD7SAUMA1 IPD600N25N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS PFD7 —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Technology Superjunction (CoolMOS) OptiMOS 3 trench MOSFET
Drain-Source Voltage (V_DS) 600 V —
Continuous Drain Current (I_D) 6 A (Tc) —
R_DS(on) Max 600 mΩ @ V_GS = 10 V, I_D = 1.7 A —
Total Gate Charge (Q_g) 8.5 nC —
Output Capacitance (C_oss) 8 pF @ 400 V —
Power Dissipation (P_D) 31 W (Tc) —
Gate Threshold Voltage (V_GS(th)) 3.5 V (typ) —
Kemasan PG-TO252-3 (DPAK) PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount
Jenis Pemasangan Surface Mount Surface Mount (Tape & Reel)
Suhu Operasi -55°C to +150°C (Tj) —
Aras MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant —
Reel Quantity 2500 —
Part Series — OptiMOS 3
Drain-Source Voltage (VDS) — 250 V
Continuous Drain Current (ID) at Tc — 25 A
Power Dissipation (PD) at Tc — 136 W
On-Resistance RDS(on) max — 60 mOhm at VGS = 10 V
Tegangan Had Kepasaran — [DATA_NEEDED: VGS(th) typical/min/max]
Suhu Hubungan Operasi — -55 C to +175 C
Lead Plating — Pb-free
RoHS Compliance — Compliant
Boson Bebas — Yes, per IEC 61249-2-21
JEDEC Qualification — Qualified for target application

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