IPD60R600PFD7SAUMA1 vs IPD600N25N3GATMA1 比較

詳細並排比較 IPD60R600PFD7SAUMA1 由 Infineon 與 IPD600N25N3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD60R600PFD7SAUMA1 IPD60R600PFD7SAUMA1 - 600V 6A 600mΩ CoolMOS PFD7 MOSFET | Infineon

IPD60R600PFD7SAUMA1 - 600V 6A 600mΩ CoolMOS PFD7 MOSFET | Infineon

IPD60R600PFD7SAUMA1 ✓ 啟用中
Infineon
IPD600N25N3GATMA1 IPD600N25N3GATMA1 - 250V 25A OptiMOS 3 N-MOSFET DPAK | Infineon

IPD600N25N3GATMA1 - 250V 25A OptiMOS 3 N-MOSFET DPAK | Infineon

IPD600N25N3GATMA1 ✓ 啟用中

規格比較

參數 IPD60R600PFD7SAUMA1 IPD600N25N3GATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS PFD7 —
電晶體類型 N-Channel MOSFET N-Channel MOSFET
Technology Superjunction (CoolMOS) OptiMOS 3 trench MOSFET
Drain-Source Voltage (V_DS) 600 V —
Continuous Drain Current (I_D) 6 A (Tc) —
R_DS(on) Max 600 mΩ @ V_GS = 10 V, I_D = 1.7 A —
Total Gate Charge (Q_g) 8.5 nC —
Output Capacitance (C_oss) 8 pF @ 400 V —
Power Dissipation (P_D) 31 W (Tc) —
Gate Threshold Voltage (V_GS(th)) 3.5 V (typ) —
封裝 PG-TO252-3 (DPAK) PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount
安裝類型 Surface Mount Surface Mount (Tape & Reel)
工作溫度 -55°C to +150°C (Tj) —
MSL 等級 1 (per JEDEC J-STD-020) —
RoHS 狀態 Compliant —
Reel Quantity 2500 —
Part Series — OptiMOS 3
Drain-Source Voltage (VDS) — 250 V
Continuous Drain Current (ID) at Tc — 25 A
Power Dissipation (PD) at Tc — 136 W
On-Resistance RDS(on) max — 60 mOhm at VGS = 10 V
閘極臨界電壓 — [DATA_NEEDED: VGS(th) typical/min/max]
工作接面溫度 — -55 C to +175 C
Lead Plating — Pb-free
RoHS Compliance — Compliant
無鹵素 — Yes, per IEC 61249-2-21
JEDEC Qualification — Qualified for target application

資料表與資源

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