IPD90P04P405ATMA2 vs IPB70N10S3L12ATMA1 Perbandingan

Perbandingan bersamaan detil IPD90P04P405ATMA2 dari Infineon dan IPB70N10S3L12ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD90P04P405ATMA2 IPB70N10S3L12ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (VDS) -40 V 100 V
Continuous Drain Current (ID, Tc) -90 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD, Tc) 125 W —
On-Resistance RDS(on) at VGS = -10 V 4.7 mΩ (typical) —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Rentang Suhu Kerja -55 °C to +175 °C (Tj) —
Paket PG-TO252-3-313 (DPAK, surface mount) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) —
Process Technology OptiMOS-P2 (trench + field plate) —
Level MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant —
Manufacturer — Infineon Technologies
Series — OptiMOS (IPB70N10)
Tipe Transistor — N-Channel MOSFET, Enhancement Mode
Continuous Drain Current (ID) at TC=25°C — 70 A
Peak Drain Current (IDM) — 180 A
On-Resistance RDS(on) max at VGS=10V — 11.8 mΩ
Power Dissipation (PD) at TC=25°C — 125 W
Suhu Hubung Kerja — -55 °C to +175 °C
Paket / Case — PG-TO263-3-2 (D2PAK, 2 Leads + Tab)
Automotive Qualification — AEC-Q101 Qualified
MSL (Moisture Sensitivity Level) — MSL1 (up to 260 °C peak reflow)
RoHS / Green — RoHS Compliant, Green Product
Avalanche Tested — 100 % Avalanche Tested
Bebas Halogen — Yes

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