IPD90P04P405ATMA2 vs IPB70N10S3L12ATMA1 比較
詳細並排比較 IPD90P04P405ATMA2 由 Infineon 與 IPB70N10S3L12ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPB70N10S3L12ATMA1 - 100V 70A 11.8mΩ OptiMOS N-Ch MOSFET | Infineon
IPB70N10S3L12ATMA1 ✓ 啟用中規格比較
| 參數 | IPD90P04P405ATMA2 | IPB70N10S3L12ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -40 V | 100 V |
| Continuous Drain Current (ID, Tc) | -90 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc) | 125 W | — |
| On-Resistance RDS(on) at VGS = -10 V | 4.7 mΩ (typical) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| 工作溫度範圍 | -55 °C to +175 °C (Tj) | — |
| 封裝 | PG-TO252-3-313 (DPAK, surface mount) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (Gate, Drain, Source) | — |
| Process Technology | OptiMOS-P2 (trench + field plate) | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| RoHS 狀態 | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS (IPB70N10) |
| 電晶體類型 | — | N-Channel MOSFET, Enhancement Mode |
| Continuous Drain Current (ID) at TC=25°C | — | 70 A |
| Peak Drain Current (IDM) | — | 180 A |
| On-Resistance RDS(on) max at VGS=10V | — | 11.8 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 125 W |
| 工作接面溫度 | — | -55 °C to +175 °C |
| 封裝 / 外殼 | — | PG-TO263-3-2 (D2PAK, 2 Leads + Tab) |
| Automotive Qualification | — | AEC-Q101 Qualified |
| MSL (Moisture Sensitivity Level) | — | MSL1 (up to 260 °C peak reflow) |
| RoHS / Green | — | RoHS Compliant, Green Product |
| Avalanche Tested | — | 100 % Avalanche Tested |
| 無鹵素 | — | Yes |