IPD90P04P405ATMA2 vs IPB70N10S3L12ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD90P04P405ATMA2 disebabkan oleh Infineon dan IPB70N10S3L12ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD90P04P405ATMA2 IPB70N10S3L12ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (VDS) -40 V 100 V
Continuous Drain Current (ID, Tc) -90 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD, Tc) 125 W —
On-Resistance RDS(on) at VGS = -10 V 4.7 mΩ (typical) —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Gambaran Suhu Operasi -55 °C to +175 °C (Tj) —
Kemasan PG-TO252-3-313 (DPAK, surface mount) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) —
Process Technology OptiMOS-P2 (trench + field plate) —
Aras MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant —
Manufacturer — Infineon Technologies
Series — OptiMOS (IPB70N10)
Jenis Transistor — N-Channel MOSFET, Enhancement Mode
Continuous Drain Current (ID) at TC=25°C — 70 A
Peak Drain Current (IDM) — 180 A
On-Resistance RDS(on) max at VGS=10V — 11.8 mΩ
Power Dissipation (PD) at TC=25°C — 125 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Kemasan / Case — PG-TO263-3-2 (D2PAK, 2 Leads + Tab)
Automotive Qualification — AEC-Q101 Qualified
MSL (Moisture Sensitivity Level) — MSL1 (up to 260 °C peak reflow)
RoHS / Green — RoHS Compliant, Green Product
Avalanche Tested — 100 % Avalanche Tested
Boson Bebas — Yes

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