IPD90P04P405ATMA2 vs IPB70N10S3L12ATMA1 Comparison

Detailed side-by-side comparison of IPD90P04P405ATMA2 by Infineon and IPB70N10S3L12ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD90P04P405ATMA2 IPB70N10S3L12ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Polarity P-Channel —
Drain-Source Voltage (VDS) -40 V 100 V
Continuous Drain Current (ID, Tc) -90 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD, Tc) 125 W —
On-Resistance RDS(on) at VGS = -10 V 4.7 mΩ (typical) —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Operating Temperature Range -55 °C to +175 °C (Tj) —
Package PG-TO252-3-313 (DPAK, surface mount) —
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source) —
Process Technology OptiMOS-P2 (trench + field plate) —
MSL Level 1 (per JEDEC J-STD-020) —
RoHS Status Compliant —
Manufacturer — Infineon Technologies
Series — OptiMOS (IPB70N10)
Transistor Type — N-Channel MOSFET, Enhancement Mode
Continuous Drain Current (ID) at TC=25°C — 70 A
Peak Drain Current (IDM) — 180 A
On-Resistance RDS(on) max at VGS=10V — 11.8 mΩ
Power Dissipation (PD) at TC=25°C — 125 W
Operating Junction Temperature — -55 °C to +175 °C
Package / Case — PG-TO263-3-2 (D2PAK, 2 Leads + Tab)
Automotive Qualification — AEC-Q101 Qualified
MSL (Moisture Sensitivity Level) — MSL1 (up to 260 °C peak reflow)
RoHS / Green — RoHS Compliant, Green Product
Avalanche Tested — 100 % Avalanche Tested
Halogen Free — Yes

Datasheets & Resources

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