IRF2907ZSTRLPBF vs IRF1010ZPBF Perbandingan

Perbandingan bersamaan detil IRF2907ZSTRLPBF dari Infineon dan IRF1010ZPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF2907ZSTRLPBF IRF1010ZPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity N-Channel —
Drain-Source Voltage V(BR)DSS 75 V —
Arus Alir Berlanjut (TC=25°C) 170 A —
Arus Alir Berlanjut (TC=100°C) [DATA_NEEDED: ID at TC=100C] —
RDS(on) max at VGS = 10 V 4.5 mOhm —
RDS(on) typical at VGS = 10 V 3.5 mOhm —
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V —
Maximum Power Dissipation (TC = 25 C) 300 W —
Suhu Hubung Kerja -55 C to +175 C —
Technology IR HEXFET / IR MOSFET —
Paket D2PAK (TO-263AB) surface mount TO-220AB (3-pin + tab), Through Hole
Jumlah Pin 3 (Gate, Drain, Source) —
Tipe Mounting Surface Mount (SMD) Through Hole
Packaging Tape and Reel (left orientation) —
Lead-Free Yes (PBF suffix) —
Status RoHS Compliant Compliant (PBF = Pb-free)
Avalanche Rating Repetitive avalanche allowed up to TJ(max) Improved repetitive avalanche rated
Polarity — N-Channel
Drain-Source Voltage (Vdss) — 55 V
Continuous Drain Current (Id) at Tc — 75 A (Tc=25C)
Power Dissipation (Pd) at Tc — 140 W (Tc=25C)
On-Resistance (Rds on) Max — [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing)
Total Gate Charge (Qg) — 63 nC (typ, per Mouser listing)
MOSFET Operating Mode — Enhancement
Configuration — Single MOSFET
Maximum Junction Temperature — 175 C
Qualification — JEDEC industry standard qualification
Lead Status — Lead Free
Gate Threshold Voltage (Vgs th) — [DATA_NEEDED: gate threshold voltage range]

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