IRF2907ZSTRLPBF vs IRF1010ZPBF 比較

詳細並排比較 IRF2907ZSTRLPBF 由 Infineon 與 IRF1010ZPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF2907ZSTRLPBF IRF1010ZPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Transistor Polarity N-Channel —
Drain-Source Voltage V(BR)DSS 75 V —
連續汲極電流 (TC=25°C) 170 A —
連續汲極電流 (TC=100°C) [DATA_NEEDED: ID at TC=100C] —
RDS(on) max at VGS = 10 V 4.5 mOhm —
RDS(on) typical at VGS = 10 V 3.5 mOhm —
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V —
Maximum Power Dissipation (TC = 25 C) 300 W —
工作接面溫度 -55 C to +175 C —
Technology IR HEXFET / IR MOSFET —
封裝 D2PAK (TO-263AB) surface mount TO-220AB (3-pin + tab), Through Hole
腳位數 3 (Gate, Drain, Source) —
安裝類型 Surface Mount (SMD) Through Hole
Packaging Tape and Reel (left orientation) —
Lead-Free Yes (PBF suffix) —
RoHS 狀態 Compliant Compliant (PBF = Pb-free)
Avalanche Rating Repetitive avalanche allowed up to TJ(max) Improved repetitive avalanche rated
Polarity — N-Channel
Drain-Source Voltage (Vdss) — 55 V
Continuous Drain Current (Id) at Tc — 75 A (Tc=25C)
Power Dissipation (Pd) at Tc — 140 W (Tc=25C)
On-Resistance (Rds on) Max — [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing)
Total Gate Charge (Qg) — 63 nC (typ, per Mouser listing)
MOSFET Operating Mode — Enhancement
Configuration — Single MOSFET
Maximum Junction Temperature — 175 C
Qualification — JEDEC industry standard qualification
Lead Status — Lead Free
Gate Threshold Voltage (Vgs th) — [DATA_NEEDED: gate threshold voltage range]

資料表與資源

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