IRF2907ZSTRLPBF vs IRF1010ZPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF2907ZSTRLPBF disebabkan oleh Infineon dan IRF1010ZPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF2907ZSTRLPBF IRF1010ZPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity N-Channel —
Drain-Source Voltage V(BR)DSS 75 V —
Arus Kumpal Tetap (TC=25°C) 170 A —
Arus Kumpal Tetap (TC=100°C) [DATA_NEEDED: ID at TC=100C] —
RDS(on) max at VGS = 10 V 4.5 mOhm —
RDS(on) typical at VGS = 10 V 3.5 mOhm —
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V —
Maximum Power Dissipation (TC = 25 C) 300 W —
Suhu Hubungan Operasi -55 C to +175 C —
Technology IR HEXFET / IR MOSFET —
Kemasan D2PAK (TO-263AB) surface mount TO-220AB (3-pin + tab), Through Hole
Kiraan Pin 3 (Gate, Drain, Source) —
Jenis Pemasangan Surface Mount (SMD) Through Hole
Packaging Tape and Reel (left orientation) —
Lead-Free Yes (PBF suffix) —
Status RoHS Compliant Compliant (PBF = Pb-free)
Avalanche Rating Repetitive avalanche allowed up to TJ(max) Improved repetitive avalanche rated
Polarity — N-Channel
Drain-Source Voltage (Vdss) — 55 V
Continuous Drain Current (Id) at Tc — 75 A (Tc=25C)
Power Dissipation (Pd) at Tc — 140 W (Tc=25C)
On-Resistance (Rds on) Max — [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing)
Total Gate Charge (Qg) — 63 nC (typ, per Mouser listing)
MOSFET Operating Mode — Enhancement
Configuration — Single MOSFET
Maximum Junction Temperature — 175 C
Qualification — JEDEC industry standard qualification
Lead Status — Lead Free
Gate Threshold Voltage (Vgs th) — [DATA_NEEDED: gate threshold voltage range]

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