IRF4905SPBF vs IPB120P04P4L03ATMA2 Perbandingan
Perbandingan bersamaan detil IRF4905SPBF dari Infineon dan IPB120P04P4L03ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IRF4905SPBF | IPB120P04P4L03ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | 40 V |
| Continuous Drain Current (ID, Tc=25C) | -42 A | 120 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on) max) | 20 mOhm @ VGS = -10V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max, typical +/-20V] | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V | [DATA_NEEDED: VGS(th) typ/range] |
| Power Dissipation (PD, Tc=25C) | 170 W | 136 W |
| Suhu Hubung Kerja | -55 C to +150 C | -55C to +175C |
| Thermal Resistance, Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC, typical 0.6 C/W] | — |
| Paket | D2PAK (TO-263) surface mount | PG-TO263-3-2 (D2PAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET, planar cell | — |
| Total Gate Charge (Qg) | 120 nC (typical per Mouser listing) | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Status RoHS | Compliant (PBF suffix indicates Pb-free) | Compliant (per Infineon product page) |
| Qualification | JEDEC standard | — |
| Transistor Polarity | — | P-Channel |
| On-Resistance (RDS(on)) | — | 3.1 mΩ (typ, per Infineon summary) |
| Technology Family | — | OptiMOS-P2 |
| Configuration | — | Single P-Channel MOSFET |
| Jumlah Pin | — | 3 (Gate, Drain, Source) |
| Level MSL | — | [DATA_NEEDED: MSL level] |