IRF4905SPBF vs IPB120P04P4L03ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF4905SPBF disebabkan oleh Infineon dan IPB120P04P4L03ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ AktifPengandingan Spesifikasi
| Parametr | IRF4905SPBF | IPB120P04P4L03ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | 40 V |
| Continuous Drain Current (ID, Tc=25C) | -42 A | 120 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on) max) | 20 mOhm @ VGS = -10V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max, typical +/-20V] | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V | [DATA_NEEDED: VGS(th) typ/range] |
| Power Dissipation (PD, Tc=25C) | 170 W | 136 W |
| Suhu Hubungan Operasi | -55 C to +150 C | -55C to +175C |
| Thermal Resistance, Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC, typical 0.6 C/W] | — |
| Kemasan | D2PAK (TO-263) surface mount | PG-TO263-3-2 (D2PAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET, planar cell | — |
| Total Gate Charge (Qg) | 120 nC (typical per Mouser listing) | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Status RoHS | Compliant (PBF suffix indicates Pb-free) | Compliant (per Infineon product page) |
| Qualification | JEDEC standard | — |
| Transistor Polarity | — | P-Channel |
| On-Resistance (RDS(on)) | — | 3.1 mΩ (typ, per Infineon summary) |
| Technology Family | — | OptiMOS-P2 |
| Configuration | — | Single P-Channel MOSFET |
| Kiraan Pin | — | 3 (Gate, Drain, Source) |
| Aras MSL | — | [DATA_NEEDED: MSL level] |