IRF4905SPBF vs IPB120P04P4L03ATMA2 比較
詳細並排比較 IRF4905SPBF 由 Infineon 與 IPB120P04P4L03ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ 啟用中規格比較
| 參數 | IRF4905SPBF | IPB120P04P4L03ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | 40 V |
| Continuous Drain Current (ID, Tc=25C) | -42 A | 120 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on) max) | 20 mOhm @ VGS = -10V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max, typical +/-20V] | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V | [DATA_NEEDED: VGS(th) typ/range] |
| Power Dissipation (PD, Tc=25C) | 170 W | 136 W |
| 工作接面溫度 | -55 C to +150 C | -55C to +175C |
| Thermal Resistance, Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC, typical 0.6 C/W] | — |
| 封裝 | D2PAK (TO-263) surface mount | PG-TO263-3-2 (D2PAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | HEXFET, planar cell | — |
| Total Gate Charge (Qg) | 120 nC (typical per Mouser listing) | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| RoHS 狀態 | Compliant (PBF suffix indicates Pb-free) | Compliant (per Infineon product page) |
| Qualification | JEDEC standard | — |
| Transistor Polarity | — | P-Channel |
| On-Resistance (RDS(on)) | — | 3.1 mΩ (typ, per Infineon summary) |
| Technology Family | — | OptiMOS-P2 |
| Configuration | — | Single P-Channel MOSFET |
| 腳位數 | — | 3 (Gate, Drain, Source) |
| MSL 等級 | — | [DATA_NEEDED: MSL level] |