IRF520NPBF vs IRFU9024NPBF Perbandingan
Perbandingan bersamaan detil IRF520NPBF dari Infineon dan IRFU9024NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF520NPBF | IRFU9024NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | HEXFET | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (V_DSS) | 100 V | — |
| Continuous Drain Current (I_D) at Tc | 9.7 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-to-Source Voltage (V_GS) max | ±20 V | — |
| R_DS(on) max at V_GS=10V | 200 mOhm | — |
| Total Gate Charge (Q_g) | 16.7 nC | — |
| Power Dissipation (P_D) at Tc | 48 W | — |
| Rentang Suhu Kerja | -55C to +175C | — |
| Paket | TO-220AB (through-hole) | IPAK (TO-251AA) Through-Hole |
| Tipe Mounting | Through Hole | Through Hole |
| Level MSL | 1 (unlimited) | — |
| Status RoHS | Compliant (Pb-free) | — |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Technology | HEXFET (vertical DMOS) | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at Tc=25C | — | -11 A |
| Pulsed Drain Current (IDM) | — | -44 A |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | — | 175 mOhm max |
| Gate-Source Threshold Voltage (VGS(th)) | — | -4 V max |
| Total Gate Charge (Qg) | — | 12.7 nC |
| Input Capacitance (Ciss) | — | 170 pF |
| Output Capacitance (Coss) | — | 92 pF |
| Reverse Transfer Capacitance (Crss) | — | 350 pF |
| Power Dissipation (PD) at Tc=25C | — | 38 W |
| Suhu Hubung Kerja | — | -55C to +175C |
| Lead-Free / RoHS Status | — | Lead-Free, RoHS Compliant |
| Avalanche Rated | — | Yes |
| Generation | — | Fifth-Generation HEXFET |