IRF520NPBF vs IRFU9024NPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRF520NPBF tarafından Infineon ve IRFU9024NPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRF520NPBF | IRFU9024NPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | HEXFET | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (V_DSS) | 100 V | — |
| Continuous Drain Current (I_D) at Tc | 9.7 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-to-Source Voltage (V_GS) max | ±20 V | — |
| R_DS(on) max at V_GS=10V | 200 mOhm | — |
| Total Gate Charge (Q_g) | 16.7 nC | — |
| Power Dissipation (P_D) at Tc | 48 W | — |
| İşletim Sıcaklığı Aralığı | -55C to +175C | — |
| Paket | TO-220AB (through-hole) | IPAK (TO-251AA) Through-Hole |
| Montaj Türü | Through Hole | Through Hole |
| MSL Seviyesi | 1 (unlimited) | — |
| RoHS Durumu | Compliant (Pb-free) | — |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Technology | HEXFET (vertical DMOS) | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at Tc=25C | — | -11 A |
| Pulsed Drain Current (IDM) | — | -44 A |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | — | 175 mOhm max |
| Gate-Source Threshold Voltage (VGS(th)) | — | -4 V max |
| Total Gate Charge (Qg) | — | 12.7 nC |
| Input Capacitance (Ciss) | — | 170 pF |
| Output Capacitance (Coss) | — | 92 pF |
| Reverse Transfer Capacitance (Crss) | — | 350 pF |
| Power Dissipation (PD) at Tc=25C | — | 38 W |
| İşletim Jant Sıcaklığı | — | -55C to +175C |
| Lead-Free / RoHS Status | — | Lead-Free, RoHS Compliant |
| Avalanche Rated | — | Yes |
| Generation | — | Fifth-Generation HEXFET |