IRF520NPBF vs IRFU9024NPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF520NPBF sa pamamagitan ng Infineon at IRFU9024NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF520NPBF IRFU9024NPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series HEXFET —
FET Type N-Channel —
Drain-to-Source Voltage (V_DSS) 100 V —
Continuous Drain Current (I_D) at Tc 9.7 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current value] —
Gate-to-Source Voltage (V_GS) max ±20 V —
R_DS(on) max at V_GS=10V 200 mOhm —
Total Gate Charge (Q_g) 16.7 nC —
Power Dissipation (P_D) at Tc 48 W —
Hanay ng Temperature na Operasyon -55C to +175C —
Packhaging TO-220AB (through-hole) IPAK (TO-251AA) Through-Hole
Uri ng Pagpapasok Through Hole Through Hole
Level ng MSL 1 (unlimited) —
Tindminan RoHS Compliant (Pb-free) —
Lead-Free Finish Yes (PBF suffix) —
Technology HEXFET (vertical DMOS) —
Polarity — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc=25C — -11 A
Pulsed Drain Current (IDM) — -44 A
Drain-Source On-Resistance (RDS(on)) at VGS=-10V — 175 mOhm max
Gate-Source Threshold Voltage (VGS(th)) — -4 V max
Total Gate Charge (Qg) — 12.7 nC
Input Capacitance (Ciss) — 170 pF
Output Capacitance (Coss) — 92 pF
Reverse Transfer Capacitance (Crss) — 350 pF
Power Dissipation (PD) at Tc=25C — 38 W
Temperature ng Junction na Operasyon — -55C to +175C
Lead-Free / RoHS Status — Lead-Free, RoHS Compliant
Avalanche Rated — Yes
Generation — Fifth-Generation HEXFET

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