IRF640NPBF vs IRF640NSTRLPBF Perbandingan
Perbandingan bersamaan detil IRF640NPBF dari Infineon dan IRF640NSTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF640NPBF | IRF640NSTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-to-Source Voltage (VDS) | 200 V | 200 V |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | — |
| Total Gate Charge (Qg) | 44.7 nC | 44.7 nC |
| Suhu Hubung Kerja | -55C to +150C | — |
| Technology | HEXFET (5th Generation) | HEXFET (5th generation, trench MOSFET) |
| Tipe Transistor | N-Channel Enhancement Mode | — |
| Paket | TO-220AB (through-hole, 3-pin) | D2PAK (TO-263AB), surface mount, 3-pin (2+tab) |
| Tipe Mounting | Through Hole | Surface Mount (Tape and Reel) |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 18 A |
| Maximum Power Dissipation (PD, Tc=25C) | — | 150 W |
| On-Resistance (RDS(on)) at VGS=10V | — | 0.15 ohm |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Rentang Suhu Hubung Kerja | — | -55C to +175C |
| Lead-Free (PbF) | — | Yes |