IRF640NPBF vs IRF640NSTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF640NPBF disebabkan oleh Infineon dan IRF640NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF640NPBF IRF640NSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-to-Source Voltage (VDS) 200 V 200 V
Continuous Drain Current (ID) at Tc 18 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max ±20 V —
Static Drain-to-Source On-Resistance (RDS(on)) 150 mOhm max at VGS = 10 V —
Power Dissipation (PD) at Tc=25C 150 W —
Total Gate Charge (Qg) 44.7 nC 44.7 nC
Suhu Hubungan Operasi -55C to +150C —
Technology HEXFET (5th Generation) HEXFET (5th generation, trench MOSFET)
Jenis Transistor N-Channel Enhancement Mode —
Kemasan TO-220AB (through-hole, 3-pin) D2PAK (TO-263AB), surface mount, 3-pin (2+tab)
Jenis Pemasangan Through Hole Surface Mount (Tape and Reel)
Avalanche Energy Rated Yes —
dv/dt Rating Dynamic, rated —
Status RoHS Compliant Compliant
Lead-Free Yes (PBF suffix) —
Manufacturer Infineon (formerly International Rectifier) —
FET Type — N-Channel
Continuous Drain Current (ID, Tc=25C) — 18 A
Maximum Power Dissipation (PD, Tc=25C) — 150 W
On-Resistance (RDS(on)) at VGS=10V — 0.15 ohm
Gate-to-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
Gambaran Suhu Hubungan Operasi — -55C to +175C
Lead-Free (PbF) — Yes

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga