IRF640NPBF vs IRF640NSTRLPBF Comparison
Detailed side-by-side comparison of IRF640NPBF by Infineon and IRF640NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF640NPBF | IRF640NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Drain-to-Source Voltage (VDS) | 200 V | 200 V |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | — |
| Total Gate Charge (Qg) | 44.7 nC | 44.7 nC |
| Operating Junction Temperature | -55C to +150C | — |
| Technology | HEXFET (5th Generation) | HEXFET (5th generation, trench MOSFET) |
| Transistor Type | N-Channel Enhancement Mode | — |
| Package | TO-220AB (through-hole, 3-pin) | D2PAK (TO-263AB), surface mount, 3-pin (2+tab) |
| Mounting Type | Through Hole | Surface Mount (Tape and Reel) |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 18 A |
| Maximum Power Dissipation (PD, Tc=25C) | — | 150 W |
| On-Resistance (RDS(on)) at VGS=10V | — | 0.15 ohm |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Operating Junction Temperature Range | — | -55C to +175C |
| Lead-Free (PbF) | — | Yes |