IRF640NPBF vs IRF640NSTRLPBF 比較
詳細並排比較 IRF640NPBF 由 Infineon 與 IRF640NSTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF640NPBF | IRF640NSTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Drain-to-Source Voltage (VDS) | 200 V | 200 V |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | — |
| Total Gate Charge (Qg) | 44.7 nC | 44.7 nC |
| 工作接面溫度 | -55C to +150C | — |
| Technology | HEXFET (5th Generation) | HEXFET (5th generation, trench MOSFET) |
| 電晶體類型 | N-Channel Enhancement Mode | — |
| 封裝 | TO-220AB (through-hole, 3-pin) | D2PAK (TO-263AB), surface mount, 3-pin (2+tab) |
| 安裝類型 | Through Hole | Surface Mount (Tape and Reel) |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 18 A |
| Maximum Power Dissipation (PD, Tc=25C) | — | 150 W |
| On-Resistance (RDS(on)) at VGS=10V | — | 0.15 ohm |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| 工作接面溫度範圍 | — | -55C to +175C |
| Lead-Free (PbF) | — | Yes |