IRF7416TRPBF vs FDS6575 Perbandingan

Perbandingan bersamaan detil IRF7416TRPBF dari Infineon dan FDS6575 dari onsemi. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7416TRPBF FDS6575
Merek Infineon onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Technology HEXFET (IR MOSFET) PowerTrench (rugged gate)
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) at TA=25C -10 A —
Pulsed Drain Current (IDM) -50 A —
Static Drain-to-Source On-Resistance (RDS(on)) max 20 mOhm at VGS = -10 V —
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) -1 V to -3 V —
Total Gate Charge (Qg) 61 nC [DATA_NEEDED: total gate charge]
Power Dissipation (PD) max at TA=25C 2.5 W —
Thermal Resistance, Junction-to-Ambient (RthJA) 50 C/W —
Rentang Suhu Hubung Kerja -55 C to +150 C —
Paket 8-SO (SOIC-8) SOIC-8 (SO-8)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Lead-Free Yes —
Level MSL 1 (unlimited) —
Polarity — P-Channel
Drain-Source Voltage (VDS) — -20 V
Continuous Drain Current (ID) — -10 A
On-Resistance (RDS(on)) — 13 mOhm max at VGS = -4.5 V
Gate Drive Voltage Range — 2.5 V to 8 V
Tegangan Batas Gerbang — [DATA_NEEDED: gate threshold voltage range]
Power Dissipation — [DATA_NEEDED: power dissipation at TA]
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]
Configuration — Single MOSFET
Gate Source Voltage (VGS) Range — [DATA_NEEDED: VGS max rating]

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