IRF7416TRPBF vs FDS6575 比較

詳細並排比較 IRF7416TRPBF 由 Infineon 與 FDS6575 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRF7416TRPBF IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF ✓ 啟用中

規格比較

參數 IRF7416TRPBF FDS6575
品牌 Infineon onsemi
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type P-Channel —
Technology HEXFET (IR MOSFET) PowerTrench (rugged gate)
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) at TA=25C -10 A —
Pulsed Drain Current (IDM) -50 A —
Static Drain-to-Source On-Resistance (RDS(on)) max 20 mOhm at VGS = -10 V —
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) -1 V to -3 V —
Total Gate Charge (Qg) 61 nC [DATA_NEEDED: total gate charge]
Power Dissipation (PD) max at TA=25C 2.5 W —
Thermal Resistance, Junction-to-Ambient (RthJA) 50 C/W —
工作接面溫度範圍 -55 C to +150 C —
封裝 8-SO (SOIC-8) SOIC-8 (SO-8)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
MSL 等級 1 (unlimited) —
Polarity — P-Channel
Drain-Source Voltage (VDS) — -20 V
Continuous Drain Current (ID) — -10 A
On-Resistance (RDS(on)) — 13 mOhm max at VGS = -4.5 V
Gate Drive Voltage Range — 2.5 V to 8 V
閘極臨界電壓 — [DATA_NEEDED: gate threshold voltage range]
Power Dissipation — [DATA_NEEDED: power dissipation at TA]
工作溫度範圍 — [DATA_NEEDED: operating temperature range]
Configuration — Single MOSFET
Gate Source Voltage (VGS) Range — [DATA_NEEDED: VGS max rating]

資料表與資源

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