IRF7416TRPBF vs FDS6575 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7416TRPBF disebabkan oleh Infineon dan FDS6575 disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7416TRPBF FDS6575
Merek Infineon onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Technology HEXFET (IR MOSFET) PowerTrench (rugged gate)
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) at TA=25C -10 A —
Pulsed Drain Current (IDM) -50 A —
Static Drain-to-Source On-Resistance (RDS(on)) max 20 mOhm at VGS = -10 V —
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) -1 V to -3 V —
Total Gate Charge (Qg) 61 nC [DATA_NEEDED: total gate charge]
Power Dissipation (PD) max at TA=25C 2.5 W —
Thermal Resistance, Junction-to-Ambient (RthJA) 50 C/W —
Gambaran Suhu Hubungan Operasi -55 C to +150 C —
Kemasan 8-SO (SOIC-8) SOIC-8 (SO-8)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL 1 (unlimited) —
Polarity — P-Channel
Drain-Source Voltage (VDS) — -20 V
Continuous Drain Current (ID) — -10 A
On-Resistance (RDS(on)) — 13 mOhm max at VGS = -4.5 V
Gate Drive Voltage Range — 2.5 V to 8 V
Tegangan Had Kepasaran — [DATA_NEEDED: gate threshold voltage range]
Power Dissipation — [DATA_NEEDED: power dissipation at TA]
Gambaran Suhu Operasi — [DATA_NEEDED: operating temperature range]
Configuration — Single MOSFET
Gate Source Voltage (VGS) Range — [DATA_NEEDED: VGS max rating]

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