IRF9Z34NPBF vs IRF9Z34NSTRRPBF Perbandingan

Perbandingan bersamaan detil IRF9Z34NPBF dari Infineon dan IRF9Z34NSTRRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF9Z34NPBF IRF9Z34NSTRRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Obsolete
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Polarity / Channel Type P-Channel —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) at Tc=25C -19 A -19 A
Pulsed Drain Current (Idm) -72 A —
Power Dissipation (Pd) at Tc=25C 68 W —
On-Resistance Rds(on) at Vgs=-10V 100 milliohm (typical) —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical/min/max] -2 V to -4 V
Gate Charge (Qg) 23.3 nC (per Mouser listing) —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Rentang Suhu Kerja -55C to +175C (junction) —
Paket TO-220AB (through-hole, 3-pin) —
Tipe Mounting Through Hole Surface Mount
Pinout (G-D-S) Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source —
Technology HEXFET (5th generation) —
Lead-Free / Halogen-Free Yes (PBF suffix) —
Status RoHS Compliant Compliant (Pb-free suffix PBF)
Part Number — IRF9Z34NSTRRPBF
Tipe Transistor — P-Channel MOSFET (HexFET)
Drain-to-Source Voltage (Vdss) — -55 V
Power Dissipation (Pd) — 68 W (Tc)
Power Dissipation (Ta) — 3.8 W
Thermal Resistance, Junction-to-Case (RthJC) — 2.2 K/W (max)
Maximum Junction Temperature — 175 °C
Paket / Case — D2PAK (TO-263-3), 3-pin (2 + Tab)
Operating Frequency — Optimized for switching below 100 kHz
Avalanche Rated — Yes (fully avalanche rated)
Packaging — Tape & Reel (STR suffix)

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