IRF9Z34NPBF vs IRF9Z34NSTRRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF9Z34NPBF disebabkan oleh Infineon dan IRF9Z34NSTRRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF9Z34NPBF IRF9Z34NSTRRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Obsolete
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Polarity / Channel Type P-Channel —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) at Tc=25C -19 A -19 A
Pulsed Drain Current (Idm) -72 A —
Power Dissipation (Pd) at Tc=25C 68 W —
On-Resistance Rds(on) at Vgs=-10V 100 milliohm (typical) —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical/min/max] -2 V to -4 V
Gate Charge (Qg) 23.3 nC (per Mouser listing) —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Gambaran Suhu Operasi -55C to +175C (junction) —
Kemasan TO-220AB (through-hole, 3-pin) —
Jenis Pemasangan Through Hole Surface Mount
Pinout (G-D-S) Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source —
Technology HEXFET (5th generation) —
Lead-Free / Halogen-Free Yes (PBF suffix) —
Status RoHS Compliant Compliant (Pb-free suffix PBF)
Part Number — IRF9Z34NSTRRPBF
Jenis Transistor — P-Channel MOSFET (HexFET)
Drain-to-Source Voltage (Vdss) — -55 V
Power Dissipation (Pd) — 68 W (Tc)
Power Dissipation (Ta) — 3.8 W
Thermal Resistance, Junction-to-Case (RthJC) — 2.2 K/W (max)
Maximum Junction Temperature — 175 °C
Kemasan / Case — D2PAK (TO-263-3), 3-pin (2 + Tab)
Operating Frequency — Optimized for switching below 100 kHz
Avalanche Rated — Yes (fully avalanche rated)
Packaging — Tape & Reel (STR suffix)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga