IRF9Z34NPBF vs IRF9Z34NSTRRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF9Z34NPBF sa pamamagitan ng Infineon at IRF9Z34NSTRRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF9Z34NPBF IRF9Z34NSTRRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Obsolete
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Polarity / Channel Type P-Channel —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) at Tc=25C -19 A -19 A
Pulsed Drain Current (Idm) -72 A —
Power Dissipation (Pd) at Tc=25C 68 W —
On-Resistance Rds(on) at Vgs=-10V 100 milliohm (typical) —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical/min/max] -2 V to -4 V
Gate Charge (Qg) 23.3 nC (per Mouser listing) —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Hanay ng Temperature na Operasyon -55C to +175C (junction) —
Packhaging TO-220AB (through-hole, 3-pin) —
Uri ng Pagpapasok Through Hole Surface Mount
Pinout (G-D-S) Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source —
Technology HEXFET (5th generation) —
Lead-Free / Halogen-Free Yes (PBF suffix) —
Tindminan RoHS Compliant Compliant (Pb-free suffix PBF)
Part Number — IRF9Z34NSTRRPBF
Uri ng Transistor — P-Channel MOSFET (HexFET)
Drain-to-Source Voltage (Vdss) — -55 V
Power Dissipation (Pd) — 68 W (Tc)
Power Dissipation (Ta) — 3.8 W
Thermal Resistance, Junction-to-Case (RthJC) — 2.2 K/W (max)
Maximum Junction Temperature — 175 °C
Packhaging / Kaso — D2PAK (TO-263-3), 3-pin (2 + Tab)
Operating Frequency — Optimized for switching below 100 kHz
Avalanche Rated — Yes (fully avalanche rated)
Packaging — Tape & Reel (STR suffix)

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