IRFR3806TRPBF vs IRFR4620TRLPBF Perbandingan

Perbandingan bersamaan detil IRFR3806TRPBF dari Infineon dan IRFR4620TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR3806TRPBF IRFR4620TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) 60 V 200 V
Continuous Drain Current (ID) at Tc 43 A —
On-State Resistance RDS(on) max 15.8 mOhm at VGS = 10 V —
Total Gate Charge (Qg) 22 nC —
Power Dissipation (Pd) at Tc = 25 C 71 W —
Paket / Case TO-252AA (DPAK) TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) IR MOSFET
Rentang Suhu Kerja -55 C to +175 C —
Gate-Source Voltage (VGS) max +/- 20 V —
Number of Units in IC 1 —
Lead-Free / RoHS Yes (PBF suffix, lead-free) —
Avalanche Rated Yes (HEXFET family) —
Manufacturer — Infineon Technologies
Part Number — IRFR4620TRLPBF
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) — 24 A at Tc
On-Resistance (RDS(on)) — 78 mOhm max at VGS=10V
Gate Charge (Qg) — 25 nC typical
Power Dissipation (PD) — 144 W at Tc
Suhu Kerja — -55C to +175C
Lead Free — Yes
Status RoHS — Compliant
Level MSL — 1 (Unlimited)

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