IRFR3806TRPBF vs IRFR4620TRLPBF 比較

詳細並排比較 IRFR3806TRPBF 由 Infineon 與 IRFR4620TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRFR3806TRPBF IRFR4620TRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Transistor Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) 60 V 200 V
Continuous Drain Current (ID) at Tc 43 A —
On-State Resistance RDS(on) max 15.8 mOhm at VGS = 10 V —
Total Gate Charge (Qg) 22 nC —
Power Dissipation (Pd) at Tc = 25 C 71 W —
封裝 / 外殼 TO-252AA (DPAK) TO-252AA (DPAK)
安裝類型 Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) IR MOSFET
工作溫度範圍 -55 C to +175 C —
Gate-Source Voltage (VGS) max +/- 20 V —
Number of Units in IC 1 —
Lead-Free / RoHS Yes (PBF suffix, lead-free) —
Avalanche Rated Yes (HEXFET family) —
Manufacturer — Infineon Technologies
Part Number — IRFR4620TRLPBF
電晶體類型 — N-Channel MOSFET
Continuous Drain Current (ID) — 24 A at Tc
On-Resistance (RDS(on)) — 78 mOhm max at VGS=10V
Gate Charge (Qg) — 25 nC typical
Power Dissipation (PD) — 144 W at Tc
工作溫度 — -55C to +175C
Lead Free — Yes
RoHS 狀態 — Compliant
MSL 等級 — 1 (Unlimited)

資料表與資源

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