IRLML2060TRPBF vs BSS123IXTSA1 Perbandingan

Perbandingan bersamaan detil IRLML2060TRPBF dari Infineon dan BSS123IXTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLML2060TRPBF BSS123IXTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TA=25C 1.2 A 190 mA
Pulsed Drain Current (IDM) 4.8 A —
Gate-to-Source Voltage (VGS) max +/- 12 V —
Gate Threshold Voltage (VGS(th)) 1.8 V typical [DATA_NEEDED: VGS(th) min/typ/max]
RDS(on) max at VGS=10V 480 mOhm —
RDS(on) max at VGS=4.5V 650 mOhm (typical 580 mOhm) —
Power Dissipation (PD) at TA=25C 1.25 W 500 mW
Thermal Resistance Junction-to-Ambient (RthetaJA) 100 C/W —
Suhu Hubung Kerja -55C to +150C —
Paket SOT-23 (Micro3, 3-pin) PG-SOT-23-3 (SOT-23-3)
Tipe Mounting Surface Mount Surface Mount
Technology IR HEXFET (Trench Gate) OptiMOS Small-Signal
Status RoHS Compliant —
Bebas Halogen Yes —
Level MSL MSL1 [DATA_NEEDED: MSL rating]
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
RDS(on) (typical, VGS=10 V) — 2.4 ohm
RDS(on) (max per family datasheet) — 6 ohm
Rentang Suhu Kerja — -55C to +150C (per family datasheet)
Qualification — Industrial
Configuration — Single N-Channel
Lead-Free / RoHS — Yes (per distributor listing)
Gate Drive Logic Level — Logic-level compatible

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