IRLML2060TRPBF vs BSS123IXTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLML2060TRPBF disebabkan oleh Infineon dan BSS123IXTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLML2060TRPBF | BSS123IXTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | 190 mA |
| Pulsed Drain Current (IDM) | 4.8 A | — |
| Gate-to-Source Voltage (VGS) max | +/- 12 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.8 V typical | [DATA_NEEDED: VGS(th) min/typ/max] |
| RDS(on) max at VGS=10V | 480 mOhm | — |
| RDS(on) max at VGS=4.5V | 650 mOhm (typical 580 mOhm) | — |
| Power Dissipation (PD) at TA=25C | 1.25 W | 500 mW |
| Thermal Resistance Junction-to-Ambient (RthetaJA) | 100 C/W | — |
| Suhu Hubungan Operasi | -55C to +150C | — |
| Kemasan | SOT-23 (Micro3, 3-pin) | PG-SOT-23-3 (SOT-23-3) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | IR HEXFET (Trench Gate) | OptiMOS Small-Signal |
| Status RoHS | Compliant | — |
| Boson Bebas | Yes | — |
| Aras MSL | MSL1 | [DATA_NEEDED: MSL rating] |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| RDS(on) (typical, VGS=10 V) | — | 2.4 ohm |
| RDS(on) (max per family datasheet) | — | 6 ohm |
| Gambaran Suhu Operasi | — | -55C to +150C (per family datasheet) |
| Qualification | — | Industrial |
| Configuration | — | Single N-Channel |
| Lead-Free / RoHS | — | Yes (per distributor listing) |
| Gate Drive Logic Level | — | Logic-level compatible |