IRLML2803TRPBF vs IRLHS6242TRPBF Perbandingan
Perbandingan bersamaan detil IRLML2803TRPBF dari Infineon dan IRLHS6242TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLML2803TRPBF | IRLHS6242TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRLML2803TRPBF | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | IR MOSFET Generation V | HEXFET (trench MOSFET) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | — |
| On-Resistance RDS(on) at VGS=4.5V | 250 mOhm maximum | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge (Qg) | 3.3 nC typical | — |
| Power Dissipation (PD) at TA=25C | 540 mW | — |
| Paket | Micro3 / SOT-23 (3-pin) | 6-PQFN (2x2) / DFN2020 with exposed pad |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +150C (TJ) | — |
| Gate Drive Level | Logic-level (driven from 3.3V / 5V) | Logic-level (4.5V); 2.5V-capable |
| Level MSL | 1 | — |
| RoHS Compliance | Compliant, Halogen-Free | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 20 V |
| Gate-to-Source Voltage (VGS) | — | ±12 V |
| Continuous Drain Current (TA) | — | 10 A |
| Continuous Drain Current (TC) | — | 12 A |
| On-Resistance RDS(on) max @ VGS=4.5V | — | 11.7 mΩ |
| Total Gate Charge (Qg) | — | 14 nC |
| Power Dissipation (TA) | — | 1.98 W |
| Power Dissipation (TC) | — | 9.6 W |
| Suhu Kerja | — | -55°C to +150°C |
| Qualification | — | JEDEC standard |