IRLML2803TRPBF vs IRLHS6242TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLML2803TRPBF disebabkan oleh Infineon dan IRLHS6242TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLML2803TRPBF IRLHS6242TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IRLML2803TRPBF —
Jenis Transistor N-Channel MOSFET —
Technology IR MOSFET Generation V HEXFET (trench MOSFET)
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 1.2 A —
On-Resistance RDS(on) at VGS=4.5V 250 mOhm maximum —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] —
Gate Charge (Qg) 3.3 nC typical —
Power Dissipation (PD) at TA=25C 540 mW —
Kemasan Micro3 / SOT-23 (3-pin) 6-PQFN (2x2) / DFN2020 with exposed pad
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (TJ) —
Gate Drive Level Logic-level (driven from 3.3V / 5V) Logic-level (4.5V); 2.5V-capable
Aras MSL 1 —
RoHS Compliance Compliant, Halogen-Free —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 20 V
Gate-to-Source Voltage (VGS) — ±12 V
Continuous Drain Current (TA) — 10 A
Continuous Drain Current (TC) — 12 A
On-Resistance RDS(on) max @ VGS=4.5V — 11.7 mΩ
Total Gate Charge (Qg) — 14 nC
Power Dissipation (TA) — 1.98 W
Power Dissipation (TC) — 9.6 W
Suhu Operasi — -55°C to +150°C
Qualification — JEDEC standard

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