IRLML2803TRPBF vs IRLHS6242TRPBF 比較

詳細並排比較 IRLML2803TRPBF 由 Infineon 與 IRLHS6242TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLML2803TRPBF IRLML2803TRPBF - 30V N-Ch MOSFET, 1.2A, SOT-23 | Infineon

IRLML2803TRPBF - 30V N-Ch MOSFET, 1.2A, SOT-23 | Infineon

IRLML2803TRPBF ✓ 啟用中
Infineon
IRLHS6242TRPBF IRLHS6242TRPBF - 20V N-CH HEXFET MOSFET, 11.7mΩ | Infineon

IRLHS6242TRPBF - 20V N-CH HEXFET MOSFET, 11.7mΩ | Infineon

IRLHS6242TRPBF ✓ 啟用中

規格比較

參數 IRLML2803TRPBF IRLHS6242TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number IRLML2803TRPBF —
電晶體類型 N-Channel MOSFET —
Technology IR MOSFET Generation V HEXFET (trench MOSFET)
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 1.2 A —
On-Resistance RDS(on) at VGS=4.5V 250 mOhm maximum —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] —
Gate Charge (Qg) 3.3 nC typical —
Power Dissipation (PD) at TA=25C 540 mW —
封裝 Micro3 / SOT-23 (3-pin) 6-PQFN (2x2) / DFN2020 with exposed pad
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +150C (TJ) —
Gate Drive Level Logic-level (driven from 3.3V / 5V) Logic-level (4.5V); 2.5V-capable
MSL 等級 1 —
RoHS Compliance Compliant, Halogen-Free —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 20 V
Gate-to-Source Voltage (VGS) — ±12 V
Continuous Drain Current (TA) — 10 A
Continuous Drain Current (TC) — 12 A
On-Resistance RDS(on) max @ VGS=4.5V — 11.7 mΩ
Total Gate Charge (Qg) — 14 nC
Power Dissipation (TA) — 1.98 W
Power Dissipation (TC) — 9.6 W
工作溫度 — -55°C to +150°C
Qualification — JEDEC standard

資料表與資源

瀏覽所有產品 建立 BOM 索取報價