IRS2153DPBF vs IRS2153DSTRPBF Perbandingan

Perbandingan bersamaan detil IRS2153DPBF dari Infineon dan IRS2153DSTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS2153DPBF IRS2153DSTRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup NRND Aktif
Product Type Half-Bridge Gate Driver IC —
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Topologi Self-Oscillating (RC-timed) Half-Bridge Gate Driver with internal oscillator
Jumlah Output 2 (High-Side, Low-Side) —
Offset Voltage (High-Side) 600 V (max) —
Output Current (Source, typ) 0.18 A —
Output Current (Sink, typ) 0.26 A —
Internal Oscillator Frequency [DATA_NEEDED: oscillator frequency range] —
Dead Time (typ) 0.5 us —
Half-Bridge Driver Propagation (typ) 1.1 us —
Bootstrap FET Integrated —
VCC Supply Voltage [DATA_NEEDED: VCC range] —
Supply Current (VCC, typ) 0.5 mA —
Shutdown Input Yes (programmable) —
Suhu Hubung Kerja -40C to +125C —
Paket 8-Pin PDIP (through-hole) 8-pin SOIC
Level MSL MSL2 / MSL3 (per Infineon datasheet family note) —
Qualification Level Industrial —
Status RoHS Compliant (Pb-free suffix) Compliant
High-Side Floating Supply Absolute Max — 600 V
VDD Supply Voltage Range — 10 V to 20 V
Output Source Current (typ.) — 0.18 A
Output Sink Current (typ.) — 0.26 A
Internal Propagation Delay (typ.) — 1.1 us
Integrated Bootstrap FET — Yes
Oscillator Type — RC-based, similar to CMOS 555 timer
Programmable Shutdown Pin — Yes
Tipe Mounting — Surface Mount
Rentang Suhu Kerja — -40C to +125C
Technology — HVIC + latch-immune CMOS
Lead-Free — Yes

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