IRS2153DPBF vs IRS2153DSTRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRS2153DPBF sa pamamagitan ng Infineon at IRS2153DSTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRS2153DPBF IRS2153DSTRPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle NRND Aktibo
Product Type Half-Bridge Gate Driver IC —
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Topolohiya Self-Oscillating (RC-timed) Half-Bridge Gate Driver with internal oscillator
Bilang ng Outputs 2 (High-Side, Low-Side) —
Offset Voltage (High-Side) 600 V (max) —
Output Current (Source, typ) 0.18 A —
Output Current (Sink, typ) 0.26 A —
Internal Oscillator Frequency [DATA_NEEDED: oscillator frequency range] —
Dead Time (typ) 0.5 us —
Half-Bridge Driver Propagation (typ) 1.1 us —
Bootstrap FET Integrated —
VCC Supply Voltage [DATA_NEEDED: VCC range] —
Supply Current (VCC, typ) 0.5 mA —
Shutdown Input Yes (programmable) —
Temperature ng Junction na Operasyon -40C to +125C —
Packhaging 8-Pin PDIP (through-hole) 8-pin SOIC
Level ng MSL MSL2 / MSL3 (per Infineon datasheet family note) —
Qualification Level Industrial —
Tindminan RoHS Compliant (Pb-free suffix) Compliant
High-Side Floating Supply Absolute Max — 600 V
VDD Supply Voltage Range — 10 V to 20 V
Output Source Current (typ.) — 0.18 A
Output Sink Current (typ.) — 0.26 A
Internal Propagation Delay (typ.) — 1.1 us
Integrated Bootstrap FET — Yes
Oscillator Type — RC-based, similar to CMOS 555 timer
Programmable Shutdown Pin — Yes
Uri ng Pagpapasok — Surface Mount
Hanay ng Temperature na Operasyon — -40C to +125C
Technology — HVIC + latch-immune CMOS
Lead-Free — Yes

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