IRS2153DSTRPBF vs IRS2153DSPBF Perbandingan

Perbandingan bersamaan detil IRS2153DSTRPBF dari Infineon dan IRS2153DSPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS2153DSTRPBF IRS2153DSPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Topologi Half-Bridge Gate Driver with internal oscillator —
High-Side Floating Supply Absolute Max 600 V —
VDD Supply Voltage Range 10 V to 20 V —
Output Source Current (typ.) 0.18 A —
Output Sink Current (typ.) 0.26 A —
Internal Propagation Delay (typ.) 1.1 us —
Integrated Bootstrap FET Yes —
Oscillator Type RC-based, similar to CMOS 555 timer —
Programmable Shutdown Pin Yes —
Paket 8-pin SOIC 8-SOIC (SOIC-8)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -40C to +125C —
Technology HVIC + latch-immune CMOS HVIC + latch-immune CMOS
Status RoHS Compliant —
Lead-Free Yes —
Fungsi — Half-bridge gate driver with RC input oscillator
Configuration — High-side + low-side driver, half-bridge
Jumlah Output — 2 (HO, LO)
Maximum Offset Voltage (Voffset) — 600 V
VCC Supply Voltage — 10 V to 20 V
VBS High-side Supply Voltage — VCC + 0.3 V (typical bootstrap)
Gate Drive Source Current (IO+) — 130 mA typical
Gate Drive Sink Current (IO-) — 270 mA typical
Rise Time (tr) — [DATA_NEEDED: tr] (typical ~100 ns)
Fall Time (tf) — [DATA_NEEDED: tf] (typical ~50 ns)
Internal Deadtime — ~1.2 us
Suhu Kerja — -40 C to +125 C
Input Type — RC-input oscillator (no external PWM required)
Logic Polarity — Inverting / Non-inverting per channel
Undervoltage Lockout — Yes (VCC)

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